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STP75NS04Z
N-channel Clamped - 7m - 80A - TO-220 Fully protected MESH OverlayTM III Power MOSFET
General features
Type STP75NS04Z

VDSS Clamped
RDS(on) < 11m
ID 80A
Low capacitance and gate charge 100% avalanche tested
3
175C maximum junction temperature
TO-220
1
2
Description
This fully clamped MOSFET is produced by using the latest advanced Company's Mesh Overlay process which is based on a novel strip layout. The inherent benefits of a new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encoured in power tools. Any other application requiring extra ruggedness is also recommended.
Internal schematic diagram
Applications

Switching application Power tools
Order codes
Part number STP75NS04Z Marking P75NS04Z Package TO-220 Packaging Tube
June 2006
Rev 1
1/12
www.st.com 12
Contents
STP75NS04Z
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STP75NS04Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDG VGS ID(1) ID IDG IGS IDM(2) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain gate current (continuos) Gate source current (continuos) Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value Clamped Clamped Clamped 80 63 50 50 320 110 0.73 8 -55 to 175 Unit V V V A A mA mA A W W/C kV C
VESD Tj Tstg
Gate-source ESD (HBM-C=100pF, R=1.5K) Operating junction temperature Storage temperature
1. Current limited by wire bonding 2. Pulse with limited by safe operating area
Table 2.
Symbol Rthj-case Rthj-amb Tl
Thermal data
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.36 62.5 300 Unit C/W C/W C
Table 3.
Symbol EAS
Avalanche data
Parameter Single pulse avalanche energy (starting Tj=25C, ID=IAR, VDD=25V) Value 470 Unit mJ
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Electrical characteristics
STP75NS04Z
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold breakdown voltage Gate threshold voltage Static drain-source on resistance Test condictions ID = 1mA, VGS= 0 VDS = 16V VGS = 10V IGS= 100A VDS= VGS, ID = 250A VGS= 10V, ID= 40A 18 2 3 7 4 11 Min. 33 1 Typ. Max. Unit V A A V V m
2
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test condictions VDS =15V, ID = 15A VDS = 25V, f = 1 MHz, VGS =0 VDD= 20V, ID= 80 A, VGS= 10 V (see Figure 13) Min. Typ. 50 1860 628 196 50 14 16 Max. Unit S pF pF pF nC nC nC
1. Pulsed: pulse duration=300s, duty cycle 1.5%
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STP75NS04Z
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching on/off
Parameter Turn-on delay time Rise time Test condictions VDD= 20V, ID = 40A , RG= 4.7 VGS= 10V, (see Figure 12) VDD= 20V, ID = 40A , RG= 4.7 VGS= 10V, (see Figure 12) Min. Typ. 16 248 Max. Unit ns ns
Turn-off delay time Fall time
53 85
ns ns
Table 7.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on Voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80A, VGS=0 ISD=80A, di/dt = 100A/s, VDD=30V, Tj=150C (see Figure 17) 53 91 3.4 Test condictions Min. Typ. Max. 80 320 1.5 Unit A A V ns nC A
VSD(2) trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STP75NS04Z
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
Figure 5.
Normalized BVDSS vs temperature
Figure 6.
Static drain-source on resistance
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STP75NS04Z Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain diode forward characteristics
7/12
Test circuit
STP75NS04Z
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
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STP75NS04Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP75NS04Z
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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STP75NS04Z
Revision history
5
Revision history
Table 8.
Date 06-Jun-2006
Revision history
Revision 1 First release Changes
11/12
STP75NS04Z
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